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| Advance Product Information January 28, 2003 Wideband mmWave VPIN SPDT Switch Key Features * * * * * * * * TGS4301-EPU 24-43 GHz High Isolation SPDT < 2 dB Typical Insertion Loss -10dB Typical Return Loss On-Chip Bias resistors Flexible Bias Pad Configuration Reflective Switch Design Integrated DC Blocks on RF Pads 2.164 x 1.055 x 0.1 mm (2.283 mm2) Fixtured Measured Performance 0 Primary Applications * * * * Point-to-Point Radio Point-to-Multipoint Radio Ka Band VSAT LMDS -1 Insertion Loss (dB) -2 -3 -4 -5 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) -30 -35 -40 -45 -50 -55 -60 24 26 28 30 32 34 36 38 40 42 44 Isolation (dB) Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information January 28, 2003 TGS4301-EPU TABLE I MAXIMUM RATINGS Symbol V I + - Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipated Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 5V -8 V 22.5 mA TBD TBD 150 C 320 C -65 to 150 C Notes 2/, 3/ 2/ 3/ 3/ 3/ 5/ 4/ V + PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device. V + max and I + max are both per bias pad. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced from TBD to TBD hours. Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels 0 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information January 28, 2003 TGS4301-EPU Measured Fixtured Data Bias Conditions: Vcontrol=5 V, I+=22 mA 0 -1 Insertion Loss (dB) -2 -3 -4 -5 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) -30 -35 -40 -45 -50 -55 -60 24 26 28 30 32 34 36 38 40 42 44 Isolation (dB) Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information January 28, 2003 TGS4301-EPU Measured Fixtured Data Bias Conditions: Vcontrol=5 V, I+=22 mA 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 24 26 28 30 32 34 36 38 40 42 44 Input Frequency (GHz) FUNCTION TABLE STATE 0 1 2 3 RF-B Isolated Isolated Low-Loss TBD RF-C Isolated Low-Loss Isolated TBD VB1 or VB2 + 5V + 5V -5 V -5 V VC2 or VC1 +5V -5 V + 5V -5 V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information January 28, 2003 TGS4301-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information January 28, 2003 TGS4301-EPU MMIC Carrier Plate Assembly Drawing Notes: 1. For biasing flexibility, two sets of bias pads are available for each branch. -Control Lines 5V (VC2 or VC4, VB1 or VB4) use on-chip resistors for diode current control. -Auxiliary pads (VC1 or VC3, VB2 or VB3) can be used if connected to a 20mA current source. 2. Positive biasing with both VC2 and VC4 or VB1 and VB4 may increase the switch's isolation at the expense of higher dissipated power. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information January 28, 2003 TGS4301-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com |
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